1. Calculate the values of conductivity and resistivity of intrinsic Silicon semiconductor with hole mobility µp=0.055 m2 /V-s and µn=0.145 m2 /V-s. Assume the concentration of electrons in the intrinsic semiconductor to be 1.5625x 1016 / m3
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1a) Compute the resistivity of intrinsic Si, Ge, and GaAs. 1b) Compute ... μn ≈1400 cm2. V-s μp ≈ 460 cm2. V-s. P = 1. nqµn + pqµp. = 1 n i q µn + µp. ( )Ω-cm ρ = 1.
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