Computer Science, asked by royalkiran406, 1 year ago

1. In order to remove the body effect, the substrate of an n-channel enhancement mode MOSFET should be
1. Connected to the most positive bias
2. Connected to the most negative bias
3. Grounded
4. Floating

Answers

Answered by prajwalgupta12345678
9

NMOS consist of p type substrate and n type channel. If p substrate is at 0 V then the body effect is not present if it is at negative voltage then the holes in the p substrate gets attracted towards the negative voltage and leaves  negative ions to satisfy space charge neutrality because of this extra negative ions the the thickness of the depletion layer will be increased thus Vt the threshold voltage is increased.

Consider an NMOS device it will have p substrate and n channel. Now if the substrate is at 0V then you will not see body effect but if the substrate voltage is lower than 0V then the electrons will need more positive gate potential to get attracted towards the channel because the substrate potential is acting against the gate potential thus you will see the Vt of the NMOS getting increased. This is body effect.

this answer assumes source is at ground. Body effect is also seen if VB is at ground and the voltage of source is increased. It is the VSB that matters.


royalkiran406: say answer sir
royalkiran406: 1. In order to remove the body effect, the substrate of an n-channel enhancement mode MOSFET should be
1. Connected to the most positive bias
2. Connected to the most negative bias
3. Grounded
4. Floating
Answered by amitaabh10
0

NMOS consist of p type substrate and n type channel. If p substrate is at 0 V then the body effect is not present if it is at negative voltage then the holes in the p substrate gets attracted towards the negative voltage and leaves  negative ions to satisfy space charge neutrality because of this extra negative ions the the thickness of the depletion layer will be increased thus Vt the threshold voltage is increased.

Consider an NMOS device it will have p substrate and n channel. Now if the substrate is at 0V then you will not see body effect but if the substrate voltage is lower than 0V then the electrons will need more positive gate potential to get attracted towards the channel because the substrate potential is acting against the gate potential thus you will see the Vt of the NMOS getting increased. This is body effect.

this answer assumes source is at ground. Body effect is also seen if VB is at ground and the voltage of source is increased. It is the VSB that matters.

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