Question

1 point
Calculate the conduction band discontinuity
at the semiconductor-oxide interface.
Give your answer in unit of eV. Answers within 5%
error will be considered correct.
Enter answer here...​

Answer 1

Explanation:

Use this information for Questions 1-3: 1. 1 point Consider a Al-SiO2-Si MOS device with donor density in silicon, Np 5 x 1015 cm3 The work function of Al is A = 4.1 V and the electron affinity of Si and SiO2 and XsiO2 0.95 V, respectively. are Xs= 4.05 V _ Calculate the conduction band discontinuity at the metal-oxide interface. Give your answer in unit of eV. Answers within 5% error will be considered correct. Enter answer here Calculate the conduction band discontinuity at the semiconductor-oxide interface. 2. 1 point Give your answer in unit of eV. Answers within 5% error will be considered correct. Enter answer here Calculate the flat band voltage. 3. 1 point Give your answer in unit of V. Answers within 5% error will be considered correct Enter answer here