Question

10. To form N-type extrinsic semiconductor, …. Type of atoms are added with Si and Ge. *

1 point

hectavalent

tetravalent

pentavalent

trivalent

 

This is a required question

11. To form P-type extrinsic semiconductor, …. Type of atoms are added with Si and Ge. *

1 point

tetravalent

pentavalent

hectavalent

trivalent

12. Gallium, indium, boron and aluminum are ……… elements. *

1 point

pentavalent

hectavalent

trivalent

tetravalent

13. Arsenic, antimony, phosphorus are …………elements. *

1 point

hectavalent

tetravalent

pentavalent

trivalent

14.Impurities like arsenic, antimony, phosphorus which produce N-type semiconductors are known as …………. *

1 point

acceptor impurities

conducting elements

donor impurities

material impurity

15. Impurities like gallium, indium, boron and aluminum which produce P-type semiconductors are known as …………. *

1 point

acceptor impurities

conducting elements

donor impurities

material impurity

16. Pure silicon and germanium are called ……….. *

1 point

extrinsic semiconductors

doped semiconductors

intrinsic semiconductors

none of these

17. Majority charge carriers in N-type semiconductor are……. *

1 point

electrons

holes

free elctrons

none of these

18 . ……… are minority charge carriers in N-type semiconductor. *

1 point

electrons

holes

free elctrons

none of these

19 . ……… are minority charge carriers in P-type semiconductor. *

1 point

electrons

holes

free elctrons

none of these

20. No of valence electrons for silicon is …….. *

1 point

1

2

3

4

21. Conductivity of semiconductor depends on …….. *

1 point

energy gap

valence band

conduction band

none of these

22. …. and …. are examples of pentavalent impurity. *

1 point

arsenic and boron

arsenic and antimony

boron and antimony

gallium and indium

23. . …. and …. are examples of trivalent impurity *

1 point

arsenic and boron

arsenic and antimony

boron and antimony

gallium and indium

24. The electrical conductivity of a semiconductor at absolute zero is ……….

1 point

infinite

zero

large

small

25. The amount of energy required to break a covalent bond is …….. *

1 point

0.72 eV for Ge and 1.12 eV for Si

0.72 eV for Si and 1.12 eV for Ge

2.4 eV for Ge and 1.7 eV for Si

1.7 eV for Ge and 2.4 eV for Si

give me all answer​

Answer 1

Answer:

How easy the semiconductor topic in physics ...