Question

2. Explain why in a transistor (a) the base is thin lightly doped and (b) the collector is large in size.
3. Explain why the base current is weak as compared to collector current?
4. Why the emitter base junction is forward biased and collector base junction is reverse biased?
5. Draw the diagram of NPN and PNP transistors and explain how it works.​

Answer 1

Answer:

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Answer 2

Explanation:

2..a)The base region in a transistor is made very thin so that there is a better conduction of majority carriers from emitter to collector through base. ... The base region in a transistor is doped lightly so that the number density of majority carriers (electrons in p-n and holes in n-p-n transistor.

b)The collector region is the largest of all regions because it must dissipate more heat than the emitter or base regions. It is designed to be large because in order to dissipate all the heater, the extra surface area allows it to do so. ... The larger area ensures that it has more surface area to dissipate heat.

3)Explanation: Base is much narrower and thinner than collectors,hence the majority of charge carriers are received by collector. Hence,collector current is greater than base current.

4)As the emitter-base is forward biased the input resistance i.e the resistance of the emitter -base junction becomes very small. Again as the collector base junction is reverse biased the output resistance i.e the resistance of the emitter -collector becomes very high.