24.
An electronic circuit element made of 23 mg of silicon. The electric current through it adds energy at
the rate of 9.2 x 10 J/s. If your design doesn't allow any heat transfer out of the element at what rate
does its temperature increase? The specific heat of silicon is 705 J/kg-K.
(A) 0.68 Ks
(B) 4 ks
(C) 0 57 Kis
(D) 8 K/s
Answers
Answer:
8 K/s is the write answer
Answer:
« previous | 3 of 3 |return to assignment SET UP AND SOLVE In 1 second, Q = (7.4 × 10-3 J/9(1 s) Q = mc ΔT the temperature change in 1 second is Practice Problem 14.7 7.4 × 10-3 J. From the equation J/(kg = 0.46 K Alternatively, we can divide both sides of this equation by Δt and rearrange factors 7.4x10-3 J Now we will look at a case where heat energy is continuously being added to a system, which, of course, causes the system's temperature to continuously rise. Suppose you are designing an electronic circuit element made of 23 mg of silicon The electric current through it adds energy at the rate of 7.4 mW = 7.4 × 10-3 J/s. If your design doesn't allow any heat transfer out of the element, at what rate does its temperature increase? The specific heat of silicon is 705 J/(kg K) me (23x106 kg) 705 J/(kg K)) AT mc 7.4×10-3 J/s (23x10-6 kg)(705 J/(kg.K) REFLECT At this rate of temperature increase (27 K every minute), the circuit element would quickly self destruct. Heat transfer is an important design consideration in electronic circuit elements Part A - Practice Problem: Suppose you need your silicon circuit element to run continuously for 3 minutes before it shuts off long enough to cool back down to its initial temperature. If the circuit element can withstand a temperature change of 5.6 C without being damaged, what is the maximum rate at which energy can be added to the circuit element? Express your answer in joules per second to two significant figures J/s
Explanation:
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