37) The potential barrier in p-n diode is
due to
O
(A) depletion of positive charges near
the junction
o
O
(B) accumulation of positive charges
near the junction
O
(C) depletion of negative charges near
the junction
O
(D) accumulation of positive and
negative charges near the junction.
Answers
Answer:
(D) Accumulation of positive and negative charges near the junction
When an n type material is joined to p type material, a p-n diode is formed.
The potential barrier in the p-n junction is a barrier that does not allow the normal flow of charge across the junction. This is also sometimes called barrier potential.
A large concentration or density of charge carriers exists which results in donor electrons migrating from donor impurity atoms across the junction towards the P type material in order to fill up the holes in them. This produces a potential barrier through collection of opposite polarity charges. Charge density of P type is filled with negatively charged acceptor ions. Similarly the charge density of N type is filled with positively charged holes. This charge transition of holes and electrons across the junction is also called diffusion.
The potential barrier which opposes further diffusion is mainly due to the accumulation of positive and negative charges near the junction.
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Answer:
(D) accumulation of positive and
negative charges near the junction.
Explanation:
this is the correct answer