A four point probe (with probe spacing (s) = 0.5 mm is used to measure the resistivity of a compensated p-type silicon sample at room temperature. Find the resistivity of the sample if the diameter is 200 mm and its thickness is 100 m. Current forced into outer two probes is 1 ma and the measured voltage between the two inner probes is 10 mv. What is the total impurity concentration(na+nd)?
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It was the phase of industrialisation before the Industrial Revolution, where there was large- scale industrial production for an international market which was not factory based...................................
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