Question

A gaas device is doped with a donor concentration of 3x10^15 cm^-3.For the device to operate properly, the intrinsic carrier concentration must remain less than 5% of the total electron concentration. What is the maximum temperature that the device can operate

Answer 1

Although the band gap and the density of states vary with temperature, those variations are much slower compared to the exponential factor e^(-Eg/2KT). Please give some insight to this problem and go over the equations and steps needed to solve for the Max temperature. Thank you,