A n-channel silicon ( 1.1 ) Eg = eV MOSFET was fabricated using
n+poly-silicon gate and the threshold voltage was found to be 1 V. Now, if the gate is changed
to p+ poly-silicon, other things remaining the same, the new threshold voltage should be
(A) -0.1 V (B) 0 V
(C) 1.0 V (D) 2.1 V
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the correct amnswer is option ''d''
2.1 V
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