Question

A n-type Si is doped with ND acceptors close to the conduction band edge. A certain type of acceptor impurity whose energy level is located at the intrinsic level is to be added to the semiconductor to obtain perfect compensation. If we assume that simple Fermi-level statistics apply, what is the concentration of acceptors required? Furthermore, after adding the acceptor impurity, what is the total number of ionized impurities if the above sample is perfect compensation?​

Answer 1

Explanation:

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