Physics, asked by gvdeepesh004, 2 months ago

A particular NMOS device has parameters VT N = 0.6V , L = 0.8

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Answered by joshimleena

Answer:

Hi mate

Explanation:

A particular NMOS device has parameters VTN = 0.6V, L = 0.8 μm. tox = 200 Å, and μn = 600 cm2/V–s. A drain current of Id = 1.2 mA is required when the device is biased in the saturation region at VGS = 3 V. Determine the required channel width of the device.

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