Question

A phosphorous doped silicon semiconductor ( doping density: 1017/cm3) is heated from 100c to 200c.

Answer 1

Answer:

1000 centimetre cube 100 degree Celsius

Answer 2

Correct answer Position of Fermi level moves towards the middle of the energy gap

Explanation:

• It is not the position of the Fermi level which moves towards the conduction band.

• Phosphorous doped silicon semiconductors - They are the four valence electrons in phosphorus.

• At the time of doping phosphorus with silicon, these valence electrons get involved with silicon atoms.

• 5th Valence electron will become free to conduct the electricity.

• Due to these excess electrons, the Phosphorus doped silicon will become a semiconductor.

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