Question

A Silicon PN junction at a temperature of 20
c C has a reverse saturation current
of 10 pico - Ameres (pA). The reserve saturation current at 40
cC for the same
bias is approximately
(A) 30 pA (B) 40 pA
(C) 50 pA (D) 60 pA

Answer 1

option ''b'' is correct

By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C, Io become 4 time than initial value and it is 40 PA.

Answer 2

The accurate solution is alternative B) 40PA

For a 10°C boom in temperature, lo doubles, so for a 20°C boom in temperature, lo turns into 4 instances of the preliminary cost and it is forty PA.

• In a PN junction diode, the opposite saturation present day is because of the diffusion waft of minority electrons from p-aspect to n-aspect and minority holes from n-aspect to p-aspect.
• Therefore, the saturation opposite present-day relies upon the electron-hollow diffusion coefficient
• The opposite saturation present day of the diode will increase with growing temperature. Nature of the opposite present-day of an excessive temperature-sensitive silicon diode.
• The opposite saturation present day of the diode will increase with growing temperature.
• The boom is 7%/°C for each germanium and silicon and more or less doubles for every 10°C booms in temperature.
• The opposite saturation present day of a silicon diode is at the order of nano amperes (nA).

Hence

The accurate solution is alternative B) 40PA

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