Question

A transistor, which may be approximated as a hemispherical heat source of radius r0 = 0.1mm, is embedded in a large silicon substrate (k = 125 w/m.k) and dissipates heat at a rate q. all boundaries of the silicon are maintained at an ambient temperature of too = 27°c, except for a plane surface which is well insulated. obtain a general expression for the substrate temperature distribution in terms of the ambient temperature ( t co ) and the surface temperature of the heat source. find the surface temperature of the heat source for q = 4w.

Answer 1

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