Science, asked by vijayankakkatt1969, 5 months ago

An Al-gate p-channel MOS transistor is made on an n-type Si substrate with Nd = 5 × 1017 cm–3. The SiO2 thickness is 100 Å in the gate region, Φms = –0.15V, and the effective interface charge Qi is 5 × 1010 qC/cm2.

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Answered by Pamuujwal

Explanation:

the names and number of animal in certain zoo are given below. use the data to make bar graph. ( scale on Y - axis , 1cm = 5 animals)

Answered by shivamkr2163

Answer:

Explanation: depletion charge per unit area at strong inversion is given as:

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