Question

Answer any Ten Questions.
10X 1-10
(A) Diffusion current in semiconductor diode flows due to () Potential (ii) Applied voltage
(in) Concentration gradient (iv) Junction breakdown
(B) Transition capacitance in semiconductor diode depends on (i) Forward current (in) Reverse
voltage (iii) Breakdown voltage (iv) Forward voltage
(C) The leakage current in an ordinary diode is due to (0) Majority carriers (ii) Minority carriers
(i) Junction capacitance (iv) none of the above
(D) Resistance of a Forward bias ideal diode is (1) Zero (11) Infinity (in) 100K (iv) 1000K
(E) The zener breakdown potentials increases with the percentage (1) Increase of doping (IT)
Decrease of doping (in) Increase of width of 'P' side (iv)Increase of width 'N' side
(F) A zener diode is (1) A non-linear device (1) A linear device (mi) An amplifier (iv) None of
(G) A diode is a) passive device b) active device c) both d) none of these
(H) Drain region lies in a) BJT b) JFET c) both d) none of these
0) JFET is a a) current controlled device b) voltage controlled device c) both d) none of these
Depletion region situated in a stome hi​

Answer 1

Answer:

I am sorry bro no explained