At 300 K, the intrinsic carrier concentration of Si is 1.5 × 10^16 3. If the electron and hole mobilities are 0.13 and 0.05 m/Vs respectively, deter mine the intrinsic resistivity of Si at 300 K
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a) Find the conductivity of intrinsic silon at 300K. It is given that ni at 300K in silicon is 1.5x1010/cm^(3) and the mobilities of electrons and holes in silicion are 1300cm2/V-sec and 500cm2/V-sec respectively.
(b) if donor type impurity is added to the extent of 1 impurity atom in 108 sillicon atoms, find the conductivity.
(c ) if acceptor inpurity is added to the extent of 1 impurity atom in 108 silicon atoms,find the conductivuity.
Given: number of a→ms/m3 for
Explanation:
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