Question

Barrier potential of a P-N junction diode does not depend on(a) doping density(b) diode design(c) temperature(d) forward bias

Answer 1

b) diode design is the ryt answer.

Answer 2

Answer:

The answer is (b) diode design.

Explanation:

Barrier potential of a p-n junction diode does not depend on the diode design but it depends on the other factors such as doping density, temperature, forward bias, etc.,

The potential difference required to carry/move the electrons through the electric field is called the "potential barrier". The barrier potential depends upon the semiconductor material, amount of doping, voltage (forward bias), temperature. It should be approximately 0.7V for silicon and 0.3V for germanium.

The diode design does not effect the potential barrier and hence it does not depend on it.