Question

By what factor would the saturation current increase transistor were ideal

Answer 1

Answer:

An nMOS transistor has a threshold voltage of 0.4 V and a supply voltage of VDD = 1.2 V. A circuit designer is evaluating a proposal to reduce Vt by 100 mV to obtain faster transistors.

a) By what factor would the saturation current increase (at Vgs = Vds = VDD) if the transistor were ideal?

b) By what factor would the subthreshold leakage current increase at room temperature at Vgs = 0? Assume n = 1.4.

c) By what factor would the subthreshold leakage current increase at 120 °C? Assume the threshold voltage is independent of temperature.

Step-by-step solution:

Step 1 of 3

The threshold voltage of an nMOS transistor is,

Consider that the threshold voltage reduces by 100 mV to obtain faster transistors. Therefore,