channel length modulation in mosfet occurs in which region
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Punch Through
Punch through is addressed to MOSFETs’ channel length modulation and occurs when the depletion regions of the drain-body and source-body junctions meet and form a single depletion region. In this situation, the current flow in the channel is not controlled by the gate voltage and promptly increases with increasing drain-source voltage (Figure 4.12).This main reason for punch through in the transistors is the current transport occurs deeper in the bulk and far away from the gate. Then the subthreshold leakage current is increased resulting in an increased power consumption. The amount of punchthrough current is dependent largely on the applied drain voltage and on the source/drain junction depths.
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