Concentrated HF is not used to etch SiO2 because
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Hydrofluoric Acid
Explanation:
A very "selective" chemical for i.e. doesn't etch silicon in the least - is acid (HF). If used directly such etchant features a too fast and aggressive action on the oxide, making very difficult the undercut and therefore the linewidth control.
Both thermally grown and deposited are often etched in buffered acid or simply acid . However, etching of deposited films proceeds tons faster than that of the thermal oxide.
When silica is heated with fluoride (HF), it forms silicon tetrafluoride . The formed during this reaction can further react with HF to make Hydrofluorosilicic acid.
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