Physics, asked by kavibharathi107, 2 months ago

Concentrated HF is not used to etch SiO2 because​

Answers

Answered by MehakSoreenn
0

Answer:

is it your answer..

Explanation:

hope you help this..

Attachments:
Answered by ridhimakh1219
0

Hydrofluoric Acid

Explanation:

A very "selective" chemical for SiO_{2} i.e. doesn't etch silicon in the least - is acid (HF). If used directly such etchant features a too fast and aggressive action on the oxide, making very difficult the undercut and therefore the linewidth control.

Both thermally grown and deposited SiO_{2} are often etched in buffered acid or simply acid . However, etching of deposited films proceeds tons faster than that of the thermal oxide.

When silica SiO_{2} is heated with fluoride (HF), it forms silicon tetrafluoride SiF_{4}. The SiF_{4} formed during this reaction can further react with HF to make Hydrofluorosilicic acid.

Similar questions