Question

Consider a Al-SiO2-Si MOS device with donor density in silicon, Nd = 5 x 10^15 cm-3.
The work function of Al is Al = 4.1 V and the electron affinity of Si and SiO2 are X si = 4.05 V and
Xsio2 = 0.95 V, respectively.
Calculate the conduction band discontinuity at the metal-oxide interface.
Give your answer in unit of eV. Answers within 5% error will be considered correct.​

Answer 1

Answer:

Consider a Al-SiO2-Si MOS device with donor density in silicon, Nd = 5 x 10^15 cm-3.

The work function of Al is Al = 4.1 V and the electron affinity of Si and SiO2 are X si = 4.05 V and

Xsio2 = 0.95 V, respectively.

Calculate the conduction band discontinuity at the metal-oxide interface.

Give your answer in unit of eV. Answers within 5% error will be considered correct.

32.......

Answer 2

Answer:

In mathematics, the Pythagorean theorem, or Pythagoras's theorem, is a fundamental relation in Euclidean geometry among the three sides of a right triangle. It states that the area of the square whose side is the hypotenuse is equal to the sum of the areas of the squares on the other two sides.

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