Question

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3.
For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K.
Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the
(i) Built in potential in equilibrium condition
(ii) Space charge width (depletion width) in a pn junction for zero bias.​
(iii) Space charge width in a pn junction for reverse bias Vr=5V

Answer 1

Concept Introduction: Semiconductors are some conductors used in all devices.

Explanation:

We have been Given: Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3.

For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K.

Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V.

We have to Find:

Calculate the

(i) Built in potential in equilibrium condition

(ii) Space charge width (depletion width) in a pn junction for zero bias.

(iii) Space charge width in a pn junction for reverse bias Vr=5V

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3.

For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K.

Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the

(i) Built in potential in equilibrium condition

(ii) Space charge width (depletion width) in a pn junction for zero bias.

(iii) Space charge width in a pn junction for reverse bias Vr=5V

Final Answer: Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3.

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3. For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K.

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3. For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K. Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3. For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K. Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the(i) Built in potential in equilibrium condition

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3. For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K. Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the(i) Built in potential in equilibrium condition(ii) Space charge width (depletion width) in a pn junction for zero bias.

Consider a silicon pn junction at T = 300 K with doping concentrations of Na=10^16 cm^-3 and Na =10^15 cm^-3. For Si, intrinsic carrier concentration ni=1.5x10^10 cm^-3 at 300K. Assume the dielectric constant of silicon to be Esi=11.7 eo and Eo= 8.85 x 10-14 F/cm. Use kT/q=0.026 V. Calculate the(i) Built in potential in equilibrium condition(ii) Space charge width (depletion width) in a pn junction for zero bias.(iii) Space charge width in a pn junction for reverse bias Vr=5V

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