Question

consider a silicon pn junction diode with Na=1×10^18 cm^-3, maintained at T=300K.The minority carrier lifetimes in the p-side and n-side are tn=10^-8 s and to=10^-7 s, respectively. a)calculate the minority carrier densities at the edges of the depletion region when the applied voltage (Va) is 0.6v​

Answer 1

Explanation:

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