Question

Consider an MOS device made of a 400m
thick oxide Doue = 40 mm, and p-type silicon
with N = 5 x 1015
3. The flat band
voltage of this MOS device was measured to
be VFB = 0.9 1 (Note the voltage is
defined in such a way that the flat band
voltage is negative). There is no oxide charge
The relative permittivity of Sio, is € = 3.9
Calculate the surface potential, os, at the
threshold of strong inversion,
Give your answer in unit of V. Answers within
5% error will be considered correct.​

Answer 1

Explanation:

The speed of that wind can be measured using a tool called an anemometer. An anemometer looks like a weather vane, but instead of measuring which direction the wind is blowing with pointers, it has four cups so that it can more accurately measure wind speed. 4