Consider an n-channel mosfet with w = 20 m, l = 1 m, tox = 10 nm. Assume the id at non-saturation region for vds = 0.20 v is id = 40 a at vgs = 2 v and id = 60 a at vgs = 3 v. Find out the inversion carrier mobility? Given: the dielectric constant for the oxide is 25.
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Answer:
x hi oh from NM kggrjtgttvcyctv
Explanation:
horny PC vfkrhrirbrgrjttvtc
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