Question

Consider an nmos transistor in a 0.6 r m process with w/l= 4/2 q (i.E., 1.2/0.6 r m). In this process, the gate oxide thickness is 100 and the mobility of electrons is 350 cm2/v s. The threshold voltage is 0.7 v. Plot ids vs. Vds for vgs = 0, 1, 2, 3, 4, and 5 v.

Answer 1

Explanation:

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