Question

Contrast the electron and hole drift velocities through a 10-μm layer of intrinsic silicon across which a voltage of 3 V is imposed. Let μn = 1350 cm2 /V ·s and μp = 480 cm2 /V ·s·

Answer 1

Answer:

Contrast the electron and hole drift velocities through a 10-\mu \mathrm{m}10−μm layer of intrinsic silicon across which a voltage of 3 V is imposed. Let \mu_{n}=1350 \mathrm{cm}^{2} / \mathrm{V} \cdot \mathrm{s}μ

n

=1350cm

2

/V⋅s and \mu_{p}= 480 \mathrm{cm}^{2} / \mathrm{V} \cdot \mathrm{s}.μ

p

=480cm

2

/V⋅s.

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Answer 2

Answer:

which standard give explanation o dont no