Current increases at the ohmic contact due to *
forward biased
metal -semiconductor contact
impurity concentration is high
no potential barrier
Answers
Answer:
Ohmic contacts are normally established by reacting carbide-forming metals to form a carbide layer at the interface with diamond at temperature of ∼800°C. A high doping concentration that can be introduced by in situ B doping or ion implantation yields a low contact resistivity.
-dip galvanized steel is well suited for use in a variety of environments and fabrications, and sometimes is placed in contact with different metals including, among others, stainless steel, aluminum, copper and weathering steel.
When two different metals are in contact in a corrosive environment, one of the metals experiences accelerated galvanic corrosion while the other metal remains galvanically protected.
Metals near each other in the galvanic series have little effect on each other. Generally, as the separation between metals in the series increases, the corroding effect on the metal higher in the series increases as well.
These concentrations can be changed by many orders of magnitude by doping, which means adding to a semiconductor impurity atoms that can “donate” electrons to the conduction band (such impurities are called donors) or “accept” electrons from the valence band creating holes (such impurities are called acceptors).
a region in which particles (as alpha particles, photoelectrons, or thermions) are decelerated or stopped by a repulsive force.