Physics, asked by nissirofekacbb, 1 year ago

define current gain in common base configuration and common emitted configuration.establish a relation between the two​

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Answered by kakkerisunil
1

This type of amplifier configuration is a non-inverting voltage amplifier circuit, in that the signal voltages Vin and Vout are “in-phase”. This type of transistor arrangement is not very common due to its unusually high voltage gain characteristics. Its input characteristics represent that of a forward biased diode while the output characteristics represent that of an illuminated photo-diode.

Also this type of bipolar transistor configuration has a high ratio of output to input resistance or more importantly “load” resistance ( RL ) to “input” resistance ( Rin ) giving it a value of “Resistance Gain”. Then the voltage gain ( Av ) for a common base configuration is therefore given as:

Common Base Voltage Gain

common base transistor gain

Where: Ic/Ie is the current gain, alpha ( α ) and RL/Rin is the resistance gain.

The common base circuit is generally only used in single stage amplifier circuits such as microphone pre-amplifier or radio frequency ( Rƒ ) amplifiers due to its very good high frequency response.

The Common Emitter Amplifier Circuit

common emitter configuration

In this type of configuration, the current flowing out of the transistor must be equal to the currents flowing into the transistor as the emitter current is given as Ie = Ic + Ib.

As the load resistance ( RL ) is connected in series with the collector, the current gain of the common emitter transistor configuration is quite large as it is the ratio of Ic/Ib. A transistors current gain is given the Greek symbol of Beta, ( β ).

As the emitter current for a common emitter configuration is defined as Ie = Ic + Ib, the ratio of Ic/Ie is called Alpha, given the Greek symbol of α. Note: that the value of Alpha will always be less than unity.

Since the electrical relationship between these three currents, Ib, Ic and Ie is determined by the physical construction of the transistor itself, any small change in the base current ( Ib ), will result in a much larger change in the collector current ( Ic ).

Then, small changes in current flowing in the base will thus control the current in the emitter-collector circuit. Typically, Beta has a value between 20 and 200 for most general purpose transistors. So if a transistor has a Beta value of say 100, then one electron will flow from the base terminal for every 100 electrons flowing between the emitter-collector terminal.

By combining the expressions for both Alpha, α and Beta, β the mathematical relationship between these parameters and therefore the current gain of the transistor can be given as:

bipolar transistor alpha beta relationship

common emitter current gain

Where: “Ic” is the current flowing into the collector terminal, “Ib” is the current flowing into the base terminal and “Ie” is the current flowing out of the emitter terminal.

Then to summarise a little. This type of bipolar transistor configuration has a greater input impedance, current and power gain than that of the common base configuration but its voltage gain is much lower. The common emitter configuration is an inverting amplifier circuit. This means that the resulting output signal has a 180o phase-shift with regards to the input voltage signal.


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