Question

derive an expression for density of electrons in the conduction band of an intrinsic semiconductor

Answer 1

Answer:

We can say,

N(intrinsic) = N = P

Here, N = electron-carrier concentration, P = hole-carrier concentration

N(intrinsic) = intrinsic carrier concentration

The electron concentration in the conduction band is given as-:

N = Nce^-(EC-EF)/KBT

Here, KB is the Boltzmann constant

T is the absolute temperature of intrinsic semiconductor

Nc is the effective density of states in conduction band.

Explanation:

The conduction band is generating a number of electrons and a valance band is generation a number of holes , when these two numbers are equal we can say it an intrinsic model.

-$Shahrin$ $Khan$