Question

Difference between gunn diode and tunnel diode

Answer 1

 A gunn diode is a special type of semiconductor which have negative resistance . It is sometimes also called as transformed electronic device (TED).  This type of diode is used in high frequency electronics devices. it work on the principle of famous " Gunn effect".

While a tunnel diode is used for quick functioning  and work in the frequency of the microwave region. It's other name is " Esaki diode" . and work on the principle of "tunneling".

Answer 2

A Gunn diode, also called as a “transferred electron device (TED)” is a diode with a 2-terminal passive semi-conductor electronic component. It has a negative resistance and consists of only the N-doped semiconductor material. It cannot rectify alternating currents and does not conduct current in only 1 direction. It is used widely in high-frequency electronics and oscillators that generate microwaves, in automatic door openers, etc.

A tunnel diode, also called as the “Esaki diode” is a semiconductor that operates very well and quickly in the microwave frequency region which is made possible by using the quantum mechanical effect called as tunneling. These diodes have p-n doped junction. The heavy doping causes broken band gap where electron states of the conduction band on the n-side are aligned with the valence band hole states of the p-side.