Different types of transistors with application
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1. Bipolar Junction Transistor (BJT)
Bipolar Junction Transistors are transistors which are built up of 3 regions, the base, the collector, and the emitter. Bipolar Junction transistors, different FET transistors, are current-controlled devices. A small current entering in the base region of the transistor causes a much larger current flow from the emitter to the collector region. Bipolar junction transistors come in two major types, NPN and PNP. A NPN transistor is one in which the majority current carrier are electrons. Electron flowing from the emitter to the collector forms the base of the majority of current flow through the transistor. The further types of charge, holes, are a minority. PNP transistors are the opposite. In PNP transistors, the majority current carrier is holes.
2. Field Effect Transistor
Field Effect Transistors are made up of 3 regions, a gate, a source, and a drain. Different bipolar transistors, FETs are voltage-controlled devices. A voltage placed at the gate controls current flow from the source to the drain of the transistor. Field Effect transistors have a very high input impedance, from several mega ohms (MΩ) of resistance to much, much larger values. This high input impedance causes them to have very little current run through them. (According to ohm’s law, current is inversely affected by the value of the impedance of the circuit. If the impedance is high, the current is very low.) So FETs both draw very little current from a circuit’s power source.
3. Darlington Transistor
A Darlington transistor sometimes called as a “Darlington pair” is a transistor circuit that is made from two transistors. Sidney Darlington invented it. It is like a transistor, but it has much higher ability to gain current. The circuit can be made from two discrete transistors or it can be inside an integrated circuit. The hfe parameter with a Darlington transistor is every transistors hfe multiplied mutually. The circuit is helpful in audio amplifiers or in a probe that measures very small current that goes through the water. It is so sensitive that it can pick up the current in the skin. If you connect it to a piece of metal, you can build a touch-sensitive button.
4. Multiple-Emitter Transistor
A multiple-emitter transistor is specialize bipolar transistor frequently used as the inputs of transistor transistor logic (TTL) NAND logic gates. Input signals are applied to the emitters. Collector current stops flowing simply, if all emitters are driven by the logical high voltage, thus performing a NAND logical process using a single transistor. Multiple-emitter transistors replace diodes of DTL and agree to reduction of switching time and power dissipation.
5. Junction FET Transistor
The Junction Field Effect Transistor (JUGFET or JFET) has no PN-junctions but in its place has a narrow part of high resistivity semiconductor material forming a “Channel” of either N-type or P-type silicon for the majority carriers to flow through with two ohmic electrical connections at either end normally called the Drain and the Source respectively. There are a two basic configurations of junction field effect transistor, the N-channel JFET and the P-channel JFET. The N-channel JFET’s channel is doped with donor impurities meaning that the flow of current through the channel is negative (hence the term N-channel) in the form of electrons.
THERE ARE FEW MORE BUT IT IS IMPOSSIBLE TO WRITE MORE THAN 5000 WORDS.
1. Bipolar Junction Transistor (BJT)
Bipolar Junction Transistors are transistors which are built up of 3 regions, the base, the collector, and the emitter. Bipolar Junction transistors, different FET transistors, are current-controlled devices. A small current entering in the base region of the transistor causes a much larger current flow from the emitter to the collector region. Bipolar junction transistors come in two major types, NPN and PNP. A NPN transistor is one in which the majority current carrier are electrons. Electron flowing from the emitter to the collector forms the base of the majority of current flow through the transistor. The further types of charge, holes, are a minority. PNP transistors are the opposite. In PNP transistors, the majority current carrier is holes.
2. Field Effect Transistor
Field Effect Transistors are made up of 3 regions, a gate, a source, and a drain. Different bipolar transistors, FETs are voltage-controlled devices. A voltage placed at the gate controls current flow from the source to the drain of the transistor. Field Effect transistors have a very high input impedance, from several mega ohms (MΩ) of resistance to much, much larger values. This high input impedance causes them to have very little current run through them. (According to ohm’s law, current is inversely affected by the value of the impedance of the circuit. If the impedance is high, the current is very low.) So FETs both draw very little current from a circuit’s power source.
3. Darlington Transistor
A Darlington transistor sometimes called as a “Darlington pair” is a transistor circuit that is made from two transistors. Sidney Darlington invented it. It is like a transistor, but it has much higher ability to gain current. The circuit can be made from two discrete transistors or it can be inside an integrated circuit. The hfe parameter with a Darlington transistor is every transistors hfe multiplied mutually. The circuit is helpful in audio amplifiers or in a probe that measures very small current that goes through the water. It is so sensitive that it can pick up the current in the skin. If you connect it to a piece of metal, you can build a touch-sensitive button.
4. Multiple-Emitter Transistor
A multiple-emitter transistor is specialize bipolar transistor frequently used as the inputs of transistor transistor logic (TTL) NAND logic gates. Input signals are applied to the emitters. Collector current stops flowing simply, if all emitters are driven by the logical high voltage, thus performing a NAND logical process using a single transistor. Multiple-emitter transistors replace diodes of DTL and agree to reduction of switching time and power dissipation.
5. Junction FET Transistor
The Junction Field Effect Transistor (JUGFET or JFET) has no PN-junctions but in its place has a narrow part of high resistivity semiconductor material forming a “Channel” of either N-type or P-type silicon for the majority carriers to flow through with two ohmic electrical connections at either end normally called the Drain and the Source respectively. There are a two basic configurations of junction field effect transistor, the N-channel JFET and the P-channel JFET. The N-channel JFET’s channel is doped with donor impurities meaning that the flow of current through the channel is negative (hence the term N-channel) in the form of electrons.
THERE ARE FEW MORE BUT IT IS IMPOSSIBLE TO WRITE MORE THAN 5000 WORDS.
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