Draw circuit diagram for p -n junction diode in reverse bias.Plot its I-V characteristics.What is effect of reverse bias on depletion layer and potential barrier of p-n junction diode?
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Reverse Biased PN Junction Diode
The net result is that the depletion layer grows wider due to a lack of electrons and holes and presents a high impedance path, almost an insulator and a high potential barrier is created across the junction thus preventing current from flowing through the semiconductor material.
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To draw:
Circuit diagram for p-n junction diode in reverse bias. Plot its I-V characteristics.
What is effect of reverse bias on depletion layer and potential barrier of p-n junction diode?
Solution:
- Reverse bias for a P-N junction diode refers to the attachment of junction diode to a circuit such that the n-type semiconductor is towards the positive terminal of the cell, while the p-type semiconductor is towards the negative terminal of the cell.
- In reverse bias , the depletion layer is quite thick as compared to the thickness in forward bias.
- This thickness is attributed to movement of the charge carriers towards the respective semiconductor halves.
- As a result of this wide depletion zone, the potential barrier also increases.
- That's why , you can see that the current remains zero for a higher applied voltage, after which it increases rapidly.
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