draw h-model of BJT in CB configuration.
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Explanation:
Figure 1 gives the equivalent circuit of CE amplifier using exact h-model for CE transistor.
The following steps are used to driving the approximate h-model:
If R_L < 0.1\dfrac{1}{h_{oe}}. If hoe. RL < 0.1, then we may neglected \dfrac{1}{h_{oe}}, being in parallel with RL.
Having neglected hoe, the collected current IC equals hfe. Ib and the magnitude of the dependent voltage generator in the emitter circuit is then given by,
h_{re}\times | V_C| = h_{re} \times I_C \times R_L \approx h_{re} \times h_{fe} \times I_b\times R_L …..(1)
equivalent circuit using exact h-model of ce amplifier
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