Drawbacks of homojunction laser diode
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The main drawback of the HWCVD process is that it is challenging to prevent epitaxial growth of silicon. Epitaxial silicon growth negates the benefits of the intrinsic layer, as it pushes the true heterojunction to the epidoped layer interface
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The main drawback of the HWCVD process is that it is challenging to prevent epitaxial growth of silicon. Epitaxial silicon growth negates the benefits of the intrinsic layer, as it pushes the true heterojunction to the epidoped layer interface.
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