During reverse bias, the n side of the p-n junction alone is affected by the applied potential True False
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i think true..........
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During reverse bias, the n side of p-n junction is alone affected.
This is because in n type semiconductor electrons are the majority charge carriers and when in a reverse bias junction the positive terminal of battery is attached to the n semiconductor, the electrons get attracted towards the positive terminal creating holes in the layer.
At the same time the negative terminal of the battery is connected to the p semiconductor due to which electrons flow in that region and due to positive potential in the region the electrons are drifted towards the junction.
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