Question

Explain the formation of depletion layer and potential barrier in a pn junction diode

Answer 1

Depletion layer is inversely related to doping intensity.

While, simentaneously depletion layer is directly related to potential barrier.

So, at time of diffusion current in the forward bias, the voltage barrier formed due to diffusion of electrons from N-type to P-type comes down and the depletion layer too turns towards zero or it’s minimum as current initiates to flow in Circuit as once it moves off the knee voltage.

Opposite to it, reverse bias shows increase in depletion layer as well as voltage barrier due to minimum current flow through circuit just after the breakdown voltage.

If you are’nt able to come across the breakdown or knee voltage, let me know I will explain it too.