Question

Explain the terms 'depletion layer' and 'potential barrier' in a p-n junction diode. How are the (a) width of depletion layer, and (b) value of potential barrier affected when the p-n junction is forward biased?

Answer 1

When p-n junction diode is forward biased, potential barrier it Decreases.

Explanation:

The width of the depletion layer in a p-n junction diode decreases in forward bias due to repulsion of carriers from battery terminals, holes from p-type and electrons from n-type. Now, due to small number of ions in depletion region its potential decreases.

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Answer 2

Answer:

The value of potential barrier is 0.3V for Ge and 0.7V for Si semiconductor diode. The forward bias voltage opposes the potential barrier. Due to it, the potential barrier is reduced and hence, the width of depletion layer decreases