Find the intrinsic carrier concentration of silicon at 300 . Assume effective density of states function for valence band, and conduction band, for silicon to be 1.04 × 1019 −3 and 2.8 × 1019 −3 respectively. Bandgap of silicon is 1.1 .
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The Hall effect appears as the potential difference induced perpendicularly to the moving charge carriers and an external magnetic field. The effect is widely used for the characterization of materials and magnetic-field sensing.
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