For transistor action
(1) Base, emitter and collector regions should have similar
size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The eimtter-base junction is forward biased and basecollector
junction is reverse based.
(4) Both the emitter-base junction as well as the basecollector
junction are forward biased.
(a) (3) and (4) (b) (4) and (1)
(c) (1) and (2) (d) (2) and (3)
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➡️ For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forward biased and base-collector junction is reverse biased.
So your correct answer is Option D.
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