Question

High-rate growth of single crystal diamond in microwave plasma

Answer 1

Answer:

Explanation:

Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 μm/h at 300 torr at high power density have been achieved.

Answer 2

Answer:

Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 μm/h at 300 torr at high power density have been achieved.