How does the forbiden energy gap of an intrinsic semiconductor vary with the increase in temperature?
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It is equal to the difference of energy levels between the conduction band and valence band of the semiconductor crystal structure. The forbidden energy gap decreases with the increase in temperature. ... The number of hole electron pairs increases with increase in temperature, while its mobility decreases.
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It is equal to the difference of energy levels between the conduction band and valence band of the semiconductor crystal structure. The forbidden energy gap decreases with the increase in temperature. The number of hole electron pairs increases with increase in temperature, while its mobility decreases.
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