Physics, asked by riahabh17, 10 months ago

iconductor Electronics Question 19. The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are
(a) drift in forward bias, diffusion in reverse bias
(b) diffusion in forward bias, drift in reverse bias
(c) diffusion in both forward and reverse bias
(d) drift in both forward and reverse bias

Answers

Answered by Anonymous
0

Answer:

c) diffusion in both forward and reverse bias

Answered by CᴀɴᴅʏCʀᴜsʜ
0

Answer:

(c) diffusion in both forward and reverse bias

Similar questions