Question

If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be

(a)  2 × 1021                              

(b)  2 × 1011                              

(c)  1.41 × 1010                       

(d) 1.41 × 1016

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Answer 1

Answer:

your answer is here !

Explanation:

Doping will increase the number of electrons only and not the holes. So, number of holes will be equal to number of intrinsic carrier concentration i.e., 1.41 × 1016/m3.

option D is right answer !

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Answer 2

Answer:

(d)1.41 × 1016

Explanation:

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