If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be
(a) 2 × 1021
(b) 2 × 1011
(c) 1.41 × 1010
(d) 1.41 × 1016
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