if phosphorus is doped with silicon and silicon is doped with boron identifed the type of semiconductor
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Phosphorus creates an energy state 0.045eV below the conduction band. At room temperature, nearly all Phosphorus atoms will donate an electron to the conduction band. Therefore, doping with phosphorus will create an n-type semiconductor.
Boron has atomic number 5. It has 3 electrons in its outer orbit, i.e. 3 valence electrons. Elements with 3 valence electrons are used for p-type doping and 5-valence electrons for n-type doping.
Hence when Boron is doped with Silicon, it creates p-type doping.
The electrical properties of silicon can be manipulated by adding other elements called “dopants” which determine the silicon is either negative (N-Type) or positive (P-Type), and change the resistivity of silicon to make it more conductive. The amount of dopant determines its final resistivity. P-Type silicon semiconductor is obtained when doped with boron. Amount of boron in the silicon determines its resistivity; the less boron the more will be the resistivity while the more boron the lower resistivity.
Boron has atomic number 5. It has 3 electrons in its outer orbit, i.e. 3 valence electrons. Elements with 3 valence electrons are used for p-type doping and 5-valence electrons for n-type doping.
Hence when Boron is doped with Silicon, it creates p-type doping.
The electrical properties of silicon can be manipulated by adding other elements called “dopants” which determine the silicon is either negative (N-Type) or positive (P-Type), and change the resistivity of silicon to make it more conductive. The amount of dopant determines its final resistivity. P-Type silicon semiconductor is obtained when doped with boron. Amount of boron in the silicon determines its resistivity; the less boron the more will be the resistivity while the more boron the lower resistivity.
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