if the base region of a transistor is made large as compared to usual transistor how does it affect the collector current and the current gain of this transistor ?
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For an n-p-n transistor in the common-emitter connection, the base-emitter junction is in the forward bias and the base-collector junction in the reverse. Electrons flow from the emitter to the base where some leave the base as they recombine with holes, forming the collector current and some pass into the collector forming the collector current. If we increase the base current we get an increase in collector current .
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