In a MOSFET operating in the saturation region, the channel length modulation
effect causes
(A) an increase in the gate-source capacitance
(B) a decrease in the transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance
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D is the perfect answer and also the current increases with drain bias
Answered by
4
In a MOSFET operating in the saturation region, the channel length modulation effect causes (D) a decrease in the output resistance
Without the channel length modulation the drain current of a MOSFET is given by,
Id = μ/2 x C(W/L)(Vgs - Vt)²
∴ dI/dV = 0
=> dV/dI = ∞
=> Rd = ∞
If we consider channel length modulation, the value of Rd will be always less than ∞ . So, channel length modulation decreases the output resistance.
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